Other specifications of packaging can be provided according to customer requirements
Electronic Grade Dichlorosilane DCS 99.99% Ultra-High Purity
Electronic Grade Dichlorosilane DCS 99.99% Ultra-High Purity
Technical Specifications
1. Basic Information
| Item | Specification |
|---|---|
| Product Name | Dichlorosilane |
| Formula | SiH2Cl2 |
| CAS NO | 4109-96-0 |
| Purity | 99.99% |
| Capacity | 200 T/Y |
| Package | 47L Cylinder, CGA636 Valve |
2. Physical and Chemical Properties
| Property | Value |
|---|---|
| Appearance and properties | Colorless, highly flammable and toxic gas |
| Melting point (°C) | -122 |
| Boiling point (°C) | 8.3 |
| Relative density (water = 1) | 1.22 g/cm³ (Liquid at 0°C) |
| Flash point (°C) | -28 |
| Explosion limits (% V/V) | 4.1 - 98.8 |
| Solubility | Reacts violently with water; soluble in benzene and ether |
Packaging & Delivery
Given the highly reactive nature of Dichlorosilane, safety and purity retention are our top priorities:
- Cylinder Specifications: High-quality 47L seamless steel cylinders designed for hazardous electronics gases.
- Valve Type: Equipped with industry-standard CGA636 valves, ensuring completely leak-proof connections and preventing atmospheric contamination.
- Delivery: Strict adherence to international dangerous goods (DG) transportation regulations, with expert handling from factory to your facility.
Why Choose Us?
- Electronic Grade Precision: Achieving 99.99% purity means exceptionally low metallic and moisture impurities, directly contributing to higher wafer yields and defect-free semiconductor layers.
- CGA Standard Compliance: Using specialized CGA636 gas cylinder valves ensures seamless integration into your existing gas delivery systems.
- Expert Handling: Dichlorosilane requires highly specialized manufacturing and filling environments. Our state-of-the-art facility is purpose-built to handle these electronic specialty gases safely.
Applications
Dichlorosilane (DCS) is exclusively utilized in high-tech and semiconductor environments:
- Silicon Epitaxy: Used as a highly reactive silicon source for growing single-crystal silicon epitaxial layers at lower temperatures.
- CVD/PECVD: The preferred precursor for depositing uniform, high-quality Silicon Nitride (Si3N4) and Silicon Dioxide (SiO2) insulating layers.
