Indima ebalulekileyo ye-Ultra-High Purity Liquid Argon kwi-Semiconductor Manufacturing
Ihlabathi lanamhlanje lisebenza kwi-silicon. Ukusuka kwii-smartphones kwiipokotho zethu ukuya kumaziko amakhulu edatha anika amandla ubukrelekrele bokwenziwa, iitshiphusi zesemiconductor ziziseko zesiseko sexesha ledijithali. Nangona kunjalo, ngasemva kobunjineli obuntsonkothileyo kunye noyilo lwemicroscopic yezi chips kulele into ethuleyo, engabonakaliyo, kwaye iyimfuneko ngokupheleleyo: Ulwelo olucocekileyo oluphezulu lwe-argon.
Njengoko ishishini le-semiconductor lilandela ngokuqhubekayo uMthetho kaMoore-ukunciphisa i-transistors ukuya kwi-nanometer kunye ne-nanometer ye-nanometer-umda wephutha uphelile. Kule meko i-hyper-exacting, iigesi ze-atmospheric kunye nokungcola kwe-microscopic zezona ntshaba. Ukulwa noku, izityalo zokwenziwa kwe-semiconductor (iindwangu) zixhomekeke ekuboneleleni rhoqo, okungenasiphako kweegesi ezikhethekileyo. Phakathi kwezi, semiconductor ulwelo argon ivelele njengenxalenye ebalulekileyo ekuqinisekiseni isivuno esiphezulu, izakhiwo zekristale ezingenasiphako, kunye nokuphunyezwa ngempumelelo kwe-lithography ephezulu.
Esi sikhokelo sibanzi siphonononga indima ebalulekileyo ye-argon kwimveliso yetshiphu, sivavanya ukuba kutheni ubunyulu bayo bungenakuxoxisana, buqhuba njani ukuqhubela phambili kwe-chip. ulwelo argon electronics, kunye nokuba ikamva lisiphathele ntoni esi sixhobo siyimfuneko.
1. Yintoni i-Ultra-High Purity Liquid Argon?
IArgon (Ar) yirhasi ebekekileyo, yenza malunga ne-0.93% yeatmosfera yoMhlaba. Ayinambala, ayinavumba, ayinancasa, kwaye-ibaluleke kakhulu kwizicelo zemizi-mveliso-inert kakhulu. Ayisebenzi kunye nezinye izinto naphantsi kobushushu obugqithisileyo okanye uxinzelelo.
Nangona kunjalo, i-argon esetyenziswa kwizicelo zemihla ngemihla (njenge-welding standard) ihluke kakhulu kwi-argon efunekayo kwi-multi-billion-dollar semiconductor fab. Ulwelo olucocekileyo oluphezulu lwe-argon (UHP Argon) ibhekisela kwi-argon ehlanjululwe kwiqondo elingaqhelekanga, ngokuqhelekileyo ifikelela kumanqanaba okucoceka kwe-99.999% (5N) ukuya kwi-99.9999% (6N) okanye ngaphezulu. Kula manqanaba, ubumdaka obufana neoksijini, ukufuma, ikharbon diokside, kunye neehydrocarbons zilinganiswa ngeenxalenye ngebhiliyoni nganye (ppb) okanye iinxalenye ngetriliyoni (ppt).
Kutheni i-Liquid Form?
Ukugcina kunye nokuthutha iigesi kwimeko yazo yegesi kufuna iisilinda ezinkulu, ezinoxinzelelo oluphezulu. Ngokupholisa iargon ukuya kwindawo yayo yokubila engu -185.8°C (-302.4°F), ijiya ibe lulwelo. I-argon yolwelo ithatha malunga ne-1/840 yomthamo womlingani wayo wegesi. Oku kuxinana kungakholelekiyo kwenza kube lula kwezoqoqosho ukuthutha kunye nokugcina izixa ezikhulu ezifunwa ngamalaphu e-semiconductor, apho ithi kamva ifakwe umphunga ibuyele kwirhasi ngokuchanekileyo xa ifuneka kwindawo yokusetyenziswa.

2. Kutheni i-Semiconductor Industry ifuna ubunyulu obupheleleyo
Ukuqonda imfuneko yokucoceka okuphezulu kakhulu, umntu kufuneka aqonde ubungakanani bokwenziwa kwe-semiconductor yanamhlanje. Iichips eziphucukileyo zanamhlanje zibonisa ii-transistors ezinobubanzi bee-nanometers ezimbalwa. Ukubeka oku ngokwembono, umsonto omnye weenwele zomntu umalunga nama-80,000 ukuya kwi-100,000 yeenanometers.
Xa usakha izakhiwo kumgangatho weathom, imolekyuli enye yeoksijini okanye ithontsi lamanzi elincinane linokubangela ukusilela okuyintlekele.
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Ukufakwa kwi-Oxidation: Ioksijini engafunekiyo inokusabela kunye nezakhiwo ezithambileyo ze-silicon, ziguqula iimpawu zabo zombane.
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Usulelo lweNceba: Nokuba i-particle enye elahlekileyo iyakwazi ukujikeleza i-nanoscale transistor, inika icandelo elipheleleyo le-microchip engenamsebenzi.
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Ukunciphisa isivuno: Kwinkqubo yelaphu engamawaka ee-wafers ngeveki, ukuhla kancinci kwisivuno ngenxa yokungcoliseka kwerhasi kunokuguqulela kumashumi ezigidi zeedola kwingeniso elahlekileyo.
Ke, i semiconductor ulwelo argon yaziswe kwindawo ecocekileyo yegumbi kufuneka ingabi nazo naziphi na izingcolisi ezisebenzayo.
3. Izicelo ezingundoqo zeSemiconductor Liquid Argon
Uhambo lwe-silicon wafer ukusuka kwizinto ezikrwada ukuya kwi-microprocessor egqityiweyo ithatha amakhulukhulu amanyathelo anzima. Ulwelo olucocekileyo oluphezulu lwe-argon ludityaniswe nzulu kwiinqanaba ezininzi zolu hambo.
3.1. Ukutsalwa kweSilicon Crystal (Inkqubo yeCzochralski)
Isiseko sayo nayiphi na i-microchip yi-silicon wafer. Ezi ziqwenga zisikwa ukusuka kwi-silicon enkulu, enye-crystal ingots ekhuliswe kusetyenziswa indlela yeCzochralski (CZ). Kule nkqubo, i-polycrystalline silicon ecocwe kakhulu inyibilika kwi-quartz crucible kumaqondo obushushu angaphezu kwe-1,400 ° C. Ikristale yembewu yaziswa kwaye itsalwa ngokuthe chu ukuya phezulu, izoba ikristale eyicylindrical egqibeleleyo ekunyibilikeni.
Ngexesha lenkqubo yobushushu obugqithisileyo, i-silicon etyhidiweyo iyasebenza kakhulu. Ukuba idibene neoksijini okanye i-nitrogen, iya kwenza i-silicon dioxide okanye i-silicon nitride, itshabalalise isakhiwo se-crystalline ecocekileyo. Apha, i-argon isebenza njengomkhuseli wokugqibela. Isithando somlilo sihlanjululwa ngokuqhubekayo nge-vaporized Ulwelo olucocekileyo oluphezulu lwe-argon ukudala umoya ongasebenziyo ngokupheleleyo. Ngenxa yokuba i-argon inzima kunomoya, yenza ingubo yokukhusela phezu kwesilicon etyhidiweyo, iqinisekisa ukuba i-ingot evelayo ilungile kwaye ayinaziphene ezincinci.
3.2. Ukuchongwa kwePlasma kunye nokubekwa
Iitshiphusi zanamhlanje zakhiwe ngokwemigangatho ye-3D. Oku kubandakanya ukubeka iileya zemicroscopic yezinto zokuqhuba okanye zokugquma kwi-wafer kwaye emva koko uvale iindawo ezithile ukwenza iisekethe.
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UkuSputtering (Ukubekwa Komphunga Wasemzimbeni – PVD): I-Argon yigesi ephambili esetyenziselwa ukutshiza. Kwigumbi le-vacuum, igesi ye-argon i-ionized kwi-plasma. Ezi ion ze-argon zihlawulwe ngokufanelekileyo emva koko zikhawuleze zibe yinto ekujoliswe kuyo (efana nobhedu okanye i-titanium). Amandla ekinetic anamandla e-argon ion ezinzima awisa iiathom zisuka koko kujoliswe kuko, ezithi ke zifake ngokulinganayo kwi-wafer yesilicon. I-Argon ikhethwa ngenxa yokuba ubunzima bayo be-athomu bufaneleke ngokugqibeleleyo ukukhupha ii-athomu zesinyithi ngokufanelekileyo ngaphandle kokuphendula ngokwekhemikhali kunye nazo.
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Ukufakela i-Ion eNxibeleleyo (DRIE): Xa abavelisi kufuneka bafake ubunzulu, imisele echanekileyo kwisilicon-ebaluleke kakhulu kwiitshiphusi zememori kunye nokupakishwa okuphambili-i-argon ihlala ixutywa neegesi ezisebenzayo ukuzinzisa iplasma kunye nokunceda ukubhobhoza ngokwasemzimbeni umphezulu we-wafer, utshayela i-byproducts.
3.3. I-DUV kunye ne-EUV Lithography (i-Excimer Lasers)
I-Lithography yinkqubo yokusebenzisa ukukhanya ukuprinta iipateni zesekethe kwi-wafer. Njengoko iisekethe ziye zancipha, abavelisi kuye kwafuneka basebenzise ukukhanya kunye nobude obufutshane obufutshane. Kulapho ulwelo argon electronics dibana nefiziksi yamehlo.
I-Deep Ultraviolet (DUV) lithography ixhomekeke kakhulu kwi-ArF (Argon Fluoride) ye-excimer lasers. Ezi lasers zisebenzisa umxube olawulwa ngokuchanekileyo we-argon, i-fluorine, kunye neegesi ze-neon ukuvelisa ukukhanya okugxilwe kakhulu kunye nobude be-nanometers be-193. Ukucoceka kwe-argon esetyenziswa kule mingxunya ye-laser kungqongqo ngokumangalisayo. Nakuphi na ukungcola kunokuthoba i-laser optics, ukunciphisa ubukhulu bokukhanya, kwaye kubangele ukuba inkqubo ye-lithography iprinte i-blurry or defective circuits.
Nakwiinkqubo ezintsha ze-Extreme Ultraviolet (EUV) zelithography, i-argon idlala indima ebalulekileyo njengerhasi yokucoca ukugcina izipili ezithambileyo nezintsokothileyo zingenalo kwaphela ungcoliseko lwemolekyuli.
3.4. I-Anealing kunye ne-Thermal Processing
Emva kokuba i-dopants (efana ne-boron okanye i-phosphorus) ifakwe kwi-silicon ukuze iguqule iimpawu zayo zombane, i-wafer kufuneka ifudunyezwe kumaqondo aphezulu okushisa ukulungisa umonakalo kwi-crystal lattice kwaye isebenze i-dopants. Le nkqubo, eyaziwa ngokuba yi-annealing, kufuneka yenzeke kwindawo elawulwa ngokungqongqo, engenawo ioksijini ukuthintela umphezulu we-wafer ekubeni ube ne-oxidizing. Ukuhamba okuqhubekayo kwe-ultra-pure argon kunika le ndawo ekhuselekileyo ye-thermal.
4. I-Liquid Argon Electronics: Ukunika amandla isizukulwana esilandelayo seTech
Igama elithile ulwelo argon electronics ibandakanya ngokubanzi i-ecosystem yezixhobo zobugcisa obuphezulu kunye neenkqubo zokuvelisa ezixhomekeke kule nto i-cryogenic. Njengoko singena kwixesha elilawulwa yi-Artificial Intelligence (AI), i-Intanethi yezinto (i-IoT), kunye nezithuthi ezizimeleyo, imfuno ye-chips enamandla ngakumbi, eyonga amandla iphezulu.
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I-AI Accelerators kunye neGPUs: Iiyunithi ezinkulu zokusetyenzwa komzobo (GPUs) ezifunekayo ukuqeqesha iimodeli ze-AI njengeemodeli zolwimi ezinkulu zifuna ukufa kwesilicon enkulu, engenasiphako. Okukhona ukufa kukhulu, kokukhona liyanda ithuba lokuba ukungcola okukodwa kungonakalisa yonke itshiphu. Imekobume engenasiphako ebonelelwa ngu-UHP argon ayixoxiswanga apha.
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I-Quantum Computing: Njengoko abaphandi bephuhlisa iikhompyuter ze-quantum, izinto ezisetyenziselwa ukwenza ii-qubits zifuna indawo yokuvelisa enongcoliseko olusondeleyo. Ukuhlanjululwa kweArgon kubalulekile ekulungiseleleni i-cryogenic kunye nokuveliswa kwezi processors zesizukulwana esilandelayo.
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Umbane woMbane: Izithuthi zombane zixhomekeke kwi-Silicon Carbide (SiC) kunye ne-Gallium Nitride (GaN) amandla chips. Ukukhulisa ezi kristale zesemiconductor ezihlanganisiweyo kufuna amaqondo obushushu aphezulu ngakumbi kunesilicon eqhelekileyo, nto leyo eyenza ukuba iipropathi ezikhuselayo ze-argon zibaluleke ngakumbi.
5. Okubaluleke kakhulu kwiKhonkco loNikezelo kunye noNcedo
Ukuvelisa i-argon yolwelo olusulungekileyo lwe-ultra-high yinto emangalisayo yobunjineli bemichiza yanamhlanje. Ngokuqhelekileyo ikhutshwa emoyeni kusetyenziswa i-cryogenic fractional distillation kwiiyunithi ezinkulu zokwahlula umoya (ASUs). Nangona kunjalo, ukuvelisa igesi sisiqingatha kuphela sedabi; ukuyihambisa kwisixhobo se-semiconductor ngaphandle kokulahlekelwa bubunyulu ngumngeni ngokufanayo.
Ulawulo loNgcoliseko Ngexesha lokuHamba
Yonke ivalve, umbhobho, kunye netanki yokugcina echukumisa i Ulwelo olucocekileyo oluphezulu lwe-argon kufuneka icocwe ngombane ngokukodwa kwaye icocwe kwangaphambili. Ukuba i-tank yezothutho inokuvuza kwe-microscopic, uxinzelelo lwe-atmospheric aluyi kuvumela nje i-argon ngaphandle; amaqondo obushushu e-cryogenic ngokwenene anokuzoba ukungcola kwe-atmospheric ngaphakathi, ukonakalisa ibhetshi yonke.
Kwinqanaba le-fab, i-argon yolwelo igcinwa kwiitanki ezinkulu ze-vacuum-insulated bulk. Ithi ke idluliswe kwizitshizi ezikhethekileyo kunye nezicoci zerhasi kwindawo yokusetyenziswa kanye phambi kokungena kwigumbi lokucoca.
Ukugcina imveliso eqhubekayo, engaphazamisekiyo, abavelisi be-semiconductor kufuneka badibane nabanikezeli begesi benqanaba eliphezulu abaye baphumelela kule khonkco yokubonelela. Kumaziko akumgangatho ophezulu ajonge ukukhusela unikezelo oluqhubekayo, oluthembekileyo lwesi sixhobo esibalulekileyo kunye neemetrics eziqinisekisiweyo zokucoceka, ukuhlola izisombululo zegesi ezikhethekileyo ezivela kubaboneleli abathembekileyo abafana Igesi yeHuazhong iqinisekisa ukuba imigangatho echanekileyo iyafezekiswa kwaye ixesha lokunciphisa imveliso liyapheliswa.
6. Iingqwalasela zezoQoqosho nokusiNgqongileyo
Umthamo omkhulu we-argon osetyenziswa yi-gigafab yanamhlanje uyothusa. Indawo enye enkulu yokuvelisa i-semiconductor inokutya amashumi amawaka eetyhubhic metres zegesi ecocekileyo kakhulu yonke imihla.
Uzinzo kunye nokuRisayikilishwa
Ngenxa yokuba i-argon yigesi ehloniphekileyo kwaye ayisetyenziswa ngamachiza kwiinkqubo ezininzi ze-semiconductor (isebenza kakhulu njengekhaka elibonakalayo okanye i-plasma medium), kukho ukukhula okukhulayo ngaphakathi kweshishini lokubuyisela i-argon kunye neenkqubo zokuphinda zisetyenziswe. Amalaphu aphucukileyo ayanda ukufaka iiyunithi zokubuyisela kwi-site ezithatha i-argon exhaust ukusuka kwikristali yokutsala ifurnaces kunye namagumbi okutshiza. Le gesi ke iphinda ihlanjululwe ekuhlaleni. Ayipheleli nje ekunciphiseni kakhulu iindleko zokusebenza kwe-fab, kodwa ikwathoba i-carbon footprint ehambelana nokuxutywa kunye nokuthutha i-argon entsha kwimigama emide.
7. Ikamva leArgon kwi-Advanced Node Manufacturing
Njengoko ishishini le-semiconductor lityhala lisiya kwi-2nm, 14A (angstrom), nangaphaya, uyilo lweetransistors luyatshintsha. Sisuka kwi-FinFET sisiya kwi-Gate-All-Around (GAA) kwaye ekugqibeleni sisiya kuyilo oluhambelanayo lweFET (CFET).
Ezi zakhiwo ze-3D zifuna i-atomic layer deposition (ALD) kunye ne-atomic layer etching (ALE)-iinkqubo ezenza i-silicon ngokoqobo i-athomu enye ngexesha. Kwi-ALD kunye ne-ALE, i-pulses elawulwa ngokuchanekileyo ye-argon isetyenziselwa ukucoca igumbi lokuphendula phakathi kweedosi zekhemikhali, ukuqinisekisa ukuba ukusabela kwenzeka kuphela apho kujoliswe khona kumphezulu we-athomu.
Njengoko ukuchaneka kusanda, ukuthembela kwi semiconductor ulwelo argon iya kuqinisa kuphela. Iimfuno zokucoceka zinokuthi zigqithise imigangatho ye-6N yangoku, iqhubela kwindawo ye-7N (99.99999%) okanye ngaphezulu, iqhubela phambili ukuhlanjululwa kwegesi kunye nobuchwepheshe be-metrology.
Ukuqukumbela
Kulula ukumangaliswa yi-microprocessor egqityiweyo-iqhekeza le-silicon equlethe iibhiliyoni zeeswitshi ze-microscopic ezikwazi ukwenza iitriliyoni zezibalo ngomzuzwana. Ukanti, le ncopho yobunjineli bomntu ixhomekeke ngokupheleleyo kwizinto ezingabonakaliyo eziyakhayo.
Ulwelo olucocekileyo oluphezulu lwe-argon asiyonto nje yorhwebo; yintsika yesiseko soshishino lwesemiconductor. Ukusuka ekukhuseleni ukuzalwa okutyhidiweyo kweekristale ze-silicon ukwenza iplasma eqingqe iisekethe zesikali se-nanometer, i-argon iqinisekisa imekobume ecocekileyo eyimfuneko ukugcina uMthetho kaMoore uphila. Njengemida ye ulwelo argon electronics ukwandisa ukuxhasa i-AI, i-quantum computing, kunye nolawulo lwamandla oluhambele phambili, imfuno yolu lwelo olusulungekileyo, olungasebenziyo luya kuqhubeka ukuba luqhuba ukuqhubela phambili kobuchwepheshe behlabathi.
Ii-FAQs
I-Q1: Kutheni i-argon yolwelo ikhethwa ngaphezu kwezinye iigesi ze-inert ezifana ne-nitrogen okanye i-helium kwiinkqubo ezithile ze-semiconductor?
A: Ngelixa initrogen inexabiso eliphantsi kwaye isetyenziswa ngokubanzi njengerhasi yokucoca ngokubanzi, ayizinzi ngenene kumaqondo obushushu aphezulu kakhulu; inokusabela nge-silicon etyhidiweyo ukwenza iziphene ze-silicon nitride. I-Helium ayisebenzi kodwa ilula kakhulu kwaye iyabiza. I-Argon ibetha "indawo emnandi" -inert ngokupheleleyo nakubushushu obugqithisileyo, inzima ngokwaneleyo ukugquma isilicon etyhidiweyo, kwaye inobunzima beathom obugqibeleleyo bokukhupha iiathom ngexesha leenkqubo zokutshiza kweplasma ngaphandle kokubangela ukusabela okungafunekiyo kweekhemikhali.
I-Q2: I-argon ye-ultra-high purity liquid argon ithuthwa njani kwizityalo zokwenza i-semiconductor (iindwangu) ngaphandle kokungcola?
A: Ukugcina ubunyulu ngexesha lokuhamba ngumngeni omkhulu wolungiselelo. I-argon yolwelo ye-UHP ithuthwa kwiilori ezikhethekileyo, ezigqunywe kakhulu. Imiphezulu yangaphakathi yala matanki, kunye nazo zonke iivalvu kunye nemibhobho yokudlulisa, i-electropolished ukuya kwisibuko ukuthintela ukuphuma komoya kunye nokuchithwa kwamasuntswana. Ngaphambi kokulayisha, yonke inkqubo ihlanjululwa ngokungqongqo ngevacuum. Ekufikeni kwi-fab, irhasi idlula kwindawo yokusetyenziswa kwezicoci ezisebenzisa itekhnoloji yekhemikhali ye-getter ukuhluba nayiphi na i-ppt-level elahlekileyo (iinxalenye ngetriliyoni nganye) ukungcola phambi kokuba i-argon ifike kwi-wafer.
I-Q3: Yiyiphi inqanaba elichanekileyo lokucoceka elifunekayo kwi-"semiconductor liquid argon," kwaye ilinganiswa njani?
A: Ukwenziwa kwe-semiconductor ephezulu, ukucoceka kwe-argon kufuneka ngokuqhelekileyo kube "6N" (99.9999% ecocekileyo), nangona ezinye iinkqubo zokusika zifuna i-7N. Oku kuthetha ukuba ukungcola okufana neoksijini, ukufuma, kunye neehydrocarbons zithintelwe kwingxenye enye kwisigidi (ppm) okanye iinxalenye kwibhiliyoni nganye (ppb). La manqanaba okungcola okuncinci alinganiswa ngexesha langempela kwi-fab esebenzisa izixhobo zokuhlalutya ezibukhali kakhulu, ezifana neCavity Ring-Down Spectroscopy (CRDS) kunye neChromatography yegesi ene-mass spectrometry (GC-MS), eqinisekisa ulawulo oluqhubekayo lomgangatho.
