2. Me yasa Masana'antar Semiconductor ke buƙatar Cikakkiyar Tsabta

Don fahimtar wajibcin tsafta mai tsayi, dole ne mutum ya fahimci sikelin masana'antar semiconductor na zamani. Manyan kwakwalwan kwamfuta na yau sun ƙunshi transistors waɗanda ke faɗin ƴan nanometer kaɗan. Idan za a iya fahimtar haka, kauri ɗaya na gashin ɗan adam ya kai kusan nanometer 80,000 zuwa 100,000.

Lokacin da kuke gina sifofi a matakin atom, ƙwayar iskar oxygen guda ɗaya ko ɗigon ruwa na ɗan ƙaramin abu na iya haifar da gazawar bala'i.

• Oxidation: Oxygen da ba a so zai iya amsawa tare da sifofi masu laushi, suna canza kayan lantarki.

• Ƙarfafa Ƙarfafawa: Ko da barbashi guda ɗaya da ya ɓace na iya gajeriyar kewayawa na nanoscale transistor, yana mai da duka ɓangaren microchip mara amfani.

• Rage Haɓaka Haɓaka: A cikin keɓe da ke sarrafa dubban wafers a kowane mako, raguwar yawan amfanin ƙasa sakamakon gurɓataccen iskar gas na iya fassara zuwa dubun-dubatar daloli a cikin asarar kudaden shiga.

Saboda haka, da semiconductor ruwa argon shigar da shi cikin mahalli mai tsafta dole ne ya kasance ba shi da wani gurɓataccen gurɓataccen abu.

3. Core Applications na Semiconductor Liquid Argon

Tafiya na wafer siliki daga ɗanyen abu zuwa ƙaƙƙarfan microprocessor yana ɗaukar ɗaruruwan matakai masu rikitarwa. Ruwan argon mai tsafta mai girman gaske yana haɗewa sosai cikin yawancin mafi girman matakan wannan tafiya.

3.1. Silicon Crystal Pulling (Tsarin Czochralski)

Tushen kowane microchip shine wafer silicon. Ana yanka waɗannan wafers daga manyan siliki guda-crystal ingots da aka girma ta hanyar Czochralski (CZ). A cikin wannan tsari, silicon polycrystalline mai tsafta yana narkar da shi a cikin ma'aunin quartz a yanayin zafi sama da 1,400 ° C. Ana gabatar da lu'ulu'u iri kuma a hankali an ja shi zuwa sama, yana zana cikakkiyar lu'ulu'u na cylindrical daga narke.

A lokacin wannan matsananciyar yanayin zafi, narkakkar siliki tana aiki sosai. Idan ya haɗu da oxygen ko nitrogen, zai samar da silicon dioxide ko silicon nitride, yana lalata tsarin crystalline mai tsabta. Anan, argon yana aiki a matsayin babban mai tsaro. Ana ci gaba da tsaftace tanderun da tururi ultra-high tsarki ruwa argon don ƙirƙirar yanayi mara kyau. Saboda argon ya fi iska nauyi, yana samar da bargo mai kariya a kan narkakkar siliki, yana tabbatar da cewa abin da aka samu ya zama cikakke kuma ba shi da lahani.

3.2. Plasma Etching da Deposition

An gina kwakwalwan kwamfuta na zamani a cikin matakan 3D. Wannan ya haɗa da ajiye ƙananan yadudduka na kayan aiki ko insulating akan wafer sannan kuma cire takamaiman sassa don ƙirƙirar da'irori.

• Yawaita (Tsarin Tururi na Jiki - PVD): Argon shine iskar gas na farko da ake amfani dashi a cikin sputtering. A cikin dakin motsa jiki, argon gas yana ionized cikin plasma. Wadannan ion ions na argon da aka cajewa ana kara su cikin wani abu da aka yi niyya (kamar jan karfe ko titanium). Ƙarfin motsin motsin ions masu nauyi na argon ions yana ƙwanƙwasa atom daga abin da aka sa a gaba, wanda sai a ajiye shi daidai a kan wafer silicon. An zaɓi Argon ne saboda yawan ƙwayar atomic ɗin sa ya dace sosai don kawar da atom ɗin ƙarfe da kyau ba tare da yin amsa da sinadarai da su ba.

• Zurfafa Reactive Ion Etching (DRIE): Lokacin da masana'antun ke buƙatar zurfafa zurfi, madaidaicin ramuka cikin silicon-masu mahimmanci ga kwakwalwan ƙwaƙwalwar ajiya da manyan marufi-argon galibi ana haɗe shi da iskar gas mai ƙarfi don daidaita plasma kuma yana taimakawa jiki ya lalata saman wafer, yana share abubuwan da suka lalace.

3.3. DUV da EUV Lithography (Excimer Lasers)

Lithography shine tsari na amfani da haske don buga tsarin kewayawa akan wafer. Yayin da da'irori suka ragu, masana'antun dole ne su yi amfani da haske tare da ɗan gajeren zango. Anan shine ruwa argon lantarki shiga tsakani da kimiyyar gani da ido.

Deep Ultraviolet (DUV) lithography ya dogara sosai a kan ArF (Argon Fluoride) Laser excimer. Waɗannan lasers ɗin suna amfani da gauraya daidai gwargwado na argon, fluorine, da iskar neon don samar da hasken da aka mai da hankali sosai tare da tsawon nanometer 193. Tsaftar argon da aka yi amfani da ita a cikin waɗannan cavities na Laser yana da tsananin tsauri. Duk wani ƙazanta na iya ƙasƙantar da na'urorin laser, rage ƙarfin hasken, da kuma haifar da tsarin lithography don buga blurry ko na'urori masu lahani.

Ko da a cikin sabon tsarin lithography na Extreme Ultraviolet (EUV), argon yana taka muhimmiyar rawa a matsayin iskar gas don kiyaye tsarin madubi mai ƙayatarwa, mai sarƙaƙƙiya kwata-kwata ba tare da gurɓata kwayoyin halitta ba.

3.4. Annealing da Thermal Processing

Bayan an dasa dopants (kamar boron ko phosphorus) a cikin siliki don canza kayan lantarki, wafer ɗin dole ne a mai zafi zuwa yanayin zafi mai zafi don gyara lalacewar lattice ɗin crystal kuma kunna dopants. Wannan tsari, wanda aka sani da annealing, dole ne ya faru a cikin yanayin da ba shi da isasshen iskar oxygen don hana farfajiyar wafer daga oxidizing. Ci gaba da gudana na ultra-pure argon yana samar da wannan yanayin yanayin zafi mai aminci.

4. Liquid Argon Electronics: Ƙarfafa Ƙarfafawar Fasaha ta gaba

Ajalin ruwa argon lantarki ya ƙunshi yanayin yanayi na manyan na'urori masu fasaha da tsarin masana'antu waɗanda suka dogara da wannan kayan cryogenic. Yayin da muke matsawa cikin zamanin da Intelligence Artificial Intelligence (AI), Intanet na Abubuwa (IoT), da motoci masu cin gashin kansu ke mamayewa, buƙatar ƙarin ƙarfi, kwakwalwan kwamfuta masu ƙarfi suna haɓaka sama.

1. AI Accelerators da GPUs: Manyan na'urorin sarrafa hoto (GPUs) da ake buƙata don horar da ƙirar AI kamar manyan nau'ikan yare suna buƙatar girma mai ban mamaki, mutuwar siliki mara lahani. Mafi girma da mutuwa, mafi girman damar cewa ƙazanta ɗaya na iya lalata guntu gaba ɗaya. Yanayin mara lahani wanda UHP argon ya bayar ba za'a iya sasantawa ba anan.

2. Ƙididdigar Ƙididdigar Ƙididdiga: Kamar yadda masu bincike ke haɓaka kwamfutoci masu ƙima, manyan kayan aikin da ake amfani da su don ƙirƙirar qubits suna buƙatar mahallin masana'anta tare da gurɓata kusan sifili. Argon tsarkakewa yana da mahimmanci a cikin shirye-shiryen cryogenic da ƙirƙira waɗannan na'urori masu zuwa na gaba.

3. Wutar Lantarki: Motocin lantarki sun dogara da Silicon Carbide (SiC) da kuma Gallium Nitride (GaN) guntuwar wutar lantarki. Haɓaka wannan fili na lu'ulu'u na semiconductor yana buƙatar ma mafi girma yanayin zafi fiye da daidaitaccen silicon, yana sa kaddarorin garkuwar inert na argon ya fi mahimmanci.

5. Mahimmancin Sarkar Kaya da Samfura

Samar da tsaftataccen ruwa mai ƙarfi argon abin al'ajabi ne na injiniyan sinadarai na zamani. Yawanci ana fitar da shi daga iska ta amfani da ɓarna ɓoyayyiyar ɓarna a cikin manyan sassan raba iska (ASUs). Duk da haka, samar da iskar gas shine rabin yakin; isar da shi zuwa kayan aikin semiconductor ba tare da rasa tsabta ba daidai yake da ƙalubale.

Kula da gurɓatawa yayin wucewa

Kowane bawul, bututu, da tankin ajiya wanda ya taɓa ultra-high tsarki ruwa argon dole ne a sanya wutar lantarki ta musamman kuma a riga an tsarkake shi. Idan mai jigilar jigilar kaya yana da ko da ɗigon ƙananan ƙananan ƙwayoyin cuta, matsa lamba na yanayi ba zai bar argon kawai ba; yanayin zafi na cryogenic na iya jawo ƙazantattun yanayi a zahiri a, ɓata dukan tsari.

A matakin fab, ana adana argon ruwa a cikin manyan tankunan da ba a rufe ba. Sannan ana wuce ta ta ƙwararrun ƙwanƙolin vaporizers da masu tsabtace iskar gas da ake amfani da su dama kafin shiga cikin ɗaki mai tsabta.

Don ci gaba da samarwa mara katsewa, masana'antun semiconductor dole ne su yi haɗin gwiwa tare da manyan masu samar da iskar gas waɗanda suka ƙware wannan sarkar samar da kayayyaki. Don kayan aikin zamani waɗanda ke neman tabbatar da ci gaba, ingantaccen wadatar wannan muhimmin abu tare da ingantattun ma'auni, bincika hanyoyin samar da iskar gas na musamman daga masu samar da amintattu kamar Gas heazhong gas yana tabbatar da cewa an cika ma'auni masu ma'ana kuma an kawar da raguwar masana'antu.

6. La'akarin Tattalin Arziki da Muhalli

Yawan adadin argon da gigafab na zamani ke cinyewa yana da ban mamaki. Babban masana'antar sarrafa semiconductor guda ɗaya na iya cinye dubunnan cubic mita na iskar gas mai tsafta kowace rana.

Dorewa da sake yin amfani da su

Saboda argon iskar gas ne mai daraja kuma ba a cinye shi ta hanyar sinadarai a yawancin matakai na semiconductor (yana aiki mafi yawa azaman garkuwar jiki ko matsakaiciyar plasma), akwai haɓaka haɓakawa a cikin masana'antar don dawo da tsarin argon da sake amfani da su. Na'urori masu tasowa suna ƙara shigar da raka'o'in dawo da kayan aiki waɗanda ke kama iskar argon daga tanderun jan kristal da ɗakuna. Ana sake tsarkake wannan iskar a cikin gida. Ba wai kawai wannan yana rage ƙimar aiki na fab ɗin ba, har ma yana rage sawun carbon da ke da alaƙa da shayarwa da jigilar sabbin argon zuwa nesa mai nisa.

7. Makomar Argon a cikin Ƙirar Ƙwararrun Ƙwararru

Kamar yadda masana'antar semiconductor ke matsawa zuwa 2nm, 14A (angstrom), kuma bayan haka, gine-ginen transistor yana canzawa. Muna motsawa daga FinFET zuwa Ƙofar-All-Around (GAA) kuma daga ƙarshe zuwa ƙirar FET (CFET).

Waɗannan sifofi na 3D suna buƙatar jigon atomic Layer (ALD) da etching Layer etching (ALE)—tsari waɗanda ke sarrafa silicon a zahiri ɗaya zarra a lokaci guda. A cikin ALD da ALE, ana amfani da madaidaitan sarrafa bugun jini na argon don share ɗakin amsawa tsakanin alluran sinadarai, tabbatar da cewa halayen suna faruwa ne kawai a daidai inda aka yi niyya akan saman atomic.

Yayin da daidaito ke ƙaruwa, dogaro akan semiconductor ruwa argon zai kara tsananta. Bukatun tsarki na iya ma zarce ma'auni na 6N na yanzu, suna turawa zuwa fagen 7N (99.99999%) ko sama da haka, suna haifar da ƙarin sabbin abubuwa a cikin tsabtace gas da fasahar awo.

Ƙarshe

Yana da sauƙi a yi mamaki da ƙãre microprocessor-wani gunkin siliki mai ɗauke da biliyoyin na'urori masu saurin gani da ke da ikon yin biliyoyin lissafi a cikin daƙiƙa guda. Duk da haka, wannan kololuwar injiniyan ɗan adam ya dogara gabaɗaya ga abubuwan da ba a iya gani da ke gina ta.

Ultra-high tsarki ruwa argon ba kawai kayayyaki ba; ginshiƙi ne na ginshiƙi na masana'antar semiconductor. Daga garkuwa da narkakkar haihuwar lu'ulu'u na siliki zuwa ba da damar plasma da ke fitar da da'irar sikelin nanometer, argon yana ba da tabbacin ingantaccen yanayin da ya dace don kiyaye Dokar Moore da rai. Kamar yadda iyakoki na ruwa argon lantarki fadada don tallafawa AI, ƙididdigar ƙididdigewa, da sarrafa wutar lantarki na ci gaba, buƙatar wannan tsaftataccen ruwa mai tsafta zai ci gaba da kasancewa mai ƙarfi a bayan ci gaban fasahar duniya.

FAQs

Q1: Me yasa aka fi son argon ruwa akan sauran iskar gas kamar nitrogen ko helium a cikin wasu matakai na semiconductor?

A: Yayin da nitrogen ya fi arha kuma ana amfani da shi sosai azaman iskar gas gabaɗaya, ba lallai ba ne a cikin yanayin zafi sosai; yana iya amsawa da narkakkar siliki don samar da lahani na silicon nitride. Helium ba shi da aiki amma mai sauƙi da tsada. Argon ya buge “tabo mai daɗi”—ba shi da ƙarfi ko da a matsanancin yanayin zafi, yana da nauyi sosai don bargo narkakkar siliki, kuma yana da cikakkiyar ƙwayar atom ɗin don kawar da ƙwayoyin cuta ta jiki yayin tafiyar da aikin jini na jini ba tare da haifar da halayen sinadarai maras so ba.

Q2: Ta yaya ake jigilar ruwa mai tsaftar ruwa mai ƙarfi argon zuwa tsire-tsire masu ƙirƙira semiconductor (fabs) ba tare da gurɓata ba?

A: Kula da tsabta lokacin wucewa babban ƙalubale ne na kayan aiki. Ana jigilar ruwa UHP argon a cikin manyan motocin tanki na musamman, masu rufin rufin asiri. Fuskokin ciki na waɗannan tankuna, da kuma duk bawuloli da magudanar ruwa, ana sanya su ta hanyar lantarki zuwa ƙarshen madubi don hana fitar da gas da zubar da barbashi. Kafin lodawa, gabaɗayan tsarin yana fuskantar tsaftataccen tsabtace injin. Bayan isowa wurin fab ɗin, iskar gas ɗin ya ratsa ta na'urorin tsarkakewa masu amfani waɗanda ke amfani da fasahohin sinadarai don kawar da duk wani ɓoyayyen matakin ppt (ɓangarorin kowace tiriliyan) kafin argon ya kai ga wafer.

Q3: Menene ainihin matakin tsarki da ake buƙata don "argon ruwa na semiconductor," kuma ta yaya ake auna shi?

A: Don masana'antar semiconductor na ci gaba, tsabtar argon dole ne gabaɗaya ya zama aƙalla "6N" (99.9999% mai tsabta), kodayake wasu matakan yanke-tsalle suna buƙatar 7N. Wannan yana nufin ƙazanta irin su oxygen, danshi, da hydrocarbons an iyakance su zuwa kashi 1 a kowace miliyan (ppm) ko ma sassa na biliyan (ppb). Ana auna waɗannan matakan ƙazanta marasa ƙazanta a ainihin lokacin a fab ɗin ta amfani da kayan ƙididdiga masu mahimmanci, kamar Cavity Ring-Down Spectroscopy (CRDS) da Gas Chromatography tare da ƙididdigar yawan jama'a (GC-MS), yana tabbatar da ci gaba da sarrafa inganci.